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    • 专利摘要:
    A method of reversible bonding between a first element (102) and a second element (112), comprising the implementation of the following steps: a) producing at least one oxide layer (110) on at least one first face ( 104) of the first member (102) and / or at least one first face (114) of the second member (112); b) securing the first face (104) of the first element (102) with the first face (114) of the second element (112) such that the oxide layer (110) forms a bonding interface between the first element (102) ) and the second element (112); c) separating the second element (112) from the first element (102) by the application of a heat treatment physically and / or chemically degrading the oxide layer (110).
    公开号:FR3053046A1
    申请号:FR1655914
    申请日:2016-06-24
    公开日:2017-12-29
    发明作者:Messaoud Bedjaoui；Sylvain Poulet
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    REVERSIBLE BONDING PROCESS BETWEEN TWO ELEMENTS
    DESCRIPTION
    TECHNICAL FIELD AND PRIOR ART The invention relates to a reversible bonding process between two elements, implemented in particular between two substrates, one of which is thin and used as a medium for producing microelectronic devices. This method is advantageously applied when the production of microelectronic devices involves the implementation of high temperature steps (greater than or equal to about 400 ° C.), for example when these devices correspond to lithium micro-batteries. The advent of connected and intelligent objects is continually in search of microelectronic devices with increasingly complex forms and constraints. In addition to the intrinsic problems with the components themselves, the introduction of thin substrates (thickness less than about 500 μm) and ultrafine substrates (thickness less than about 100 μm, or even less than about 50 μm) as microelectronic device fabrication supports play a role in essential role. Nevertheless, the fine and ultrafine substrates are extremely fragile substrates with regard to the multiplication and the sequence of a multitude of technological steps necessary for the realization of the electronic and microelectronic circuits on these substrates.
    One of the solutions to address this problem of fragility is to stick these thin and ultrafine substrates on thick rigid substrates compatible with conventional methods of microelectronics.
    A first method of bonding called direct bonding, or molecular bonding, has been introduced industrially, especially for the preparation of SOI substrates (Silicon On Insulator), it consists in putting in direct contact, without use of intermediate layer, two elements characterized by two bonding surfaces sufficiently prepared in terms of flatness and particulate and organic contamination.
    For example, the document FR 2 893 750 describes the implementation of a direct bonding between a thin glass substrate and a thick rigid support substrate. After technological steps of making microelectronic devices on the thin glass substrate, separating the thin glass substrate from the thick substrate is accomplished mechanically by inserting a blade between the two bonded substrates.
    However, this technique finds its limits particularly in the case of substrates for the production of microelectronic devices whose implementation requires the implementation of steps involving significant thermal budgets, such as the deposition of active layers. By way of example, the production of lithium microbatteries requires the implementation of thermal annealing of the electrodes at temperatures of approximately 600 ° C. for several hours. However, the bonding energy of the assemblies obtained by direct bonding, without intermediate layer, can increase significantly when these assemblies are exposed to such temperatures, which causes a permanent bonding of the bonded surfaces that can no longer be separated from one another. the other without damage. In addition, the separation of the substrates requires the use of mechanical tools in friction with these substrates, which can cause localized mechanical fragilities leading to a rupture of these substrates as well as components made on these substrates.
    The technique of intermediate bonding is an alternative technique for fixing two elements to overcome some disadvantages of direct bonding, allowing in particular an easier separation between the elements. This bonding technique generally employs one or more intermediate layers, comprising, for example, adhesive polymers, arranged between the two surfaces to be joined.
    US 2011/0048611 A1 discloses a method of bonding a substrate to a thick substrate via an elastomeric adhesive layer and a method of separating the substrates chemically during which the adhesive layer is destroyed by soaking the assembly in an ultrasonic bath.
    This method of separating the substrates, however, requires an increased protection of the components present on the assembly in order to prevent any degradation in the ultrasonic bath. On the other hand, this type of bonding, in particular using polymers as adhesive materials, is incompatible with the production of microelectronic devices that require the use of high temperature processes (greater than about 400 ° C.) because of the low thermal resistance of the adhesive materials used.
    STATEMENT OF THE INVENTION
    An object of the present invention is to propose a reversible bonding process between two elements, for example two substrates, which do not have the drawbacks of prior art bonding processes, that is to say forming an assembly of two elements that is compatible with the implementation of steps involving significant thermal budgets, for example at temperatures of greater than or equal to about 400 ° C, which does not require the use of mechanical separation means that may damage the secured elements , and which does not require special protection of the elements and / or components that can be made on the assembled elements.
    For this, the invention proposes a reversible bonding method between a first element and a second element, comprising at least the implementation of the following steps: a) production of at least one oxide layer on at least a first face the first element and / or on at least a first face of the second element; b) securing the first face of the first element with the first face of the second element such that the oxide layer forms a bonding interface between the first element and the second element; c) separating the second element vis-à-vis the first element by applying a heat treatment physically degrading and / or chemically the oxide layer.
    This method uses one or more intermediate layers forming the bonding interface between the first and second elements. Thus, even if the assembly formed of the two elements joined to one another is exposed to high temperatures, for example greater than or equal to about 400 ° C., the bonding energy is not modified at the point of generate a permanent bonding of the two elements.
    In addition, the bonding interface is formed by at least one oxide layer which does not have the disadvantages of the polymer-based adhesive layers. Indeed, such an oxide layer has a good temperature resistance in the case of exposure of this layer to steps for the production of microelectronic components involving significant thermal budgets such as deposition of active layers for example by PVD ("Physical Vapor Deposition") or CVD ("Chemical Vapor Deposition" or "CVD").
    On the other hand, such an oxide layer also has the property of being degraded physically and / or chemically when it is exposed to certain particular heat treatments such as a heat treatment in a humid atmosphere (which causes a change in the roughness of the the oxide layer leading to crumbling thereof) and / or heating by laser radiation (which causes ablation of the oxide layer). It is this property specific to oxides that is used to achieve the separation of the two elements. The use of a heat treatment to separate the two elements also avoids the systematic use of mechanical separation means that can in some cases damage the secured elements.
    Finally, no particular protection is imposed by the implementation of heat treatment since this treatment only degrades the oxide layer.
    The temperature and the time during which the heat treatment is implemented are adjusted to sufficiently degrade the oxide layer to allow separation of the two elements. These parameters are adapted in particular according to the different characteristics of the bonding interface: nature of the oxide used, thickness of the oxide layer, accessibility of the oxide layer, presence of any other elements in the interface collage, etc.
    The method may be such that: the first element and / or the second element corresponds to a substrate, and / or the first element and / or the second element comprises glass and / or a semiconductor (for example silicon ) and / or a ceramic, and / or - the first element has a thickness greater than or equal to about 500 μιτι, and / or - the second element has a thickness less than about 500 μm.
    The first element and / or the second element may correspond to a substrate which may or may not include microelectronic elements or components carried and / or manufactured from this substrate. The term "substrate" refers to any type of support, including a wafer, or wafer, or a strip.
    Advantageously, one of the elements (for example the first element) may be a thick support which is full or hollow or perforated for example by several holes, and the other of the elements may be a particular thin support adapted for the production of microelectronic devices such as for example microbatteries.
    The method may further comprise, before step a), the realization of at least one opening through the first element and / or the second element.
    The presence of at least one opening passing through the first element and / or the second element makes it possible to increase the surface of the bonding interface accessible during the heat treatment of step c), which degrades the oxide layer, which reduces the time required for the degradation of the oxide layer.
    The method may further comprise, between steps b) and c), the implementation of a processing step of the first element and / or the second element. The processing step may comprise the production of at least a part of at least one microelectronic device on the second element and / or on the first element. In addition, the treatment step can be carried out at a temperature greater than or equal to about 400 ° C., and can correspond in particular to a step of deposition of active layers of one or more microelectronic devices.
    The microelectronic device produced may correspond to an energy storage device, for example a micro-battery and more particularly a lithium microbattery, and / or an energy recovery device, for example a photovoltaic cell and more particularly a cell. organic photovoltaic, and / or a display device, for example a light-emitting diode and more particularly an organic light-emitting diode (or OLED) and / or a sensor and / or an actuator. In general, the field of application of this method covers a wide range of microelectronic devices confronted with the constraints of handling fragile substrates with regard to microelectronic processes. Thus, this method can be adapted to other microelectronic devices while respecting the specificities of each application.
    The oxide layer may comprise aluminum oxide, also called alumina, and / or titanium oxide and / or zirconium oxide and / or zinc oxide and / or or silicon oxide (or more generally a metal oxide and / or a dielectric oxide), and / or - be deposited on all the surfaces of the first element and / or the second element, and / or - have a lower thickness or equal to about 100 nm, and / or be deposited by atomic layer deposition from at least one organometallic precursor and a precursor comprising water molecules.
    The heat treatment may be carried out in a humid atmosphere and / or may comprise heating by laser radiation of the oxide layer for example through one of the first and second elements.
    A humid atmosphere can be an atmosphere in which the relative humidity is greater than about 50%.
    The heat treatment may include laser radiation heating the oxide layer through one of the first and second members, wherein one of the first and second members may be transparent to laser radiation.
    In this case, the other of the first and second elements may comprise at least one layer capable of reflecting and / or absorbing the laser radiation.
    The method may further comprise: - before step b), the implementation of a plasma treatment, and / or - between steps b) and c), the implementation of a heat treatment reinforcing the bonding energy between the first element and the second element, and / or - before step c), the application of an electrostatic field to the first element and / or the second element.
    The heat treatment enhancing the bonding energy between the first member and the second member may be carried out at a temperature below about 400 ° C. Alternatively, this heat treatment can be carried out at a temperature greater than about 400 ° C depending on the nature of the oxide used to form the bonding interface, if the elements are compatible with such a temperature. The duration of the heat treatment is adapted according to the temperature with which this treatment is implemented.
    The separation of the second element vis-à-vis the first element may further comprise the application of a mechanical action and / or a jet of gas under pressure between the first and second elements. This mechanical action and / or this jet of pressurized gas are in this case used as assistance to the heat treatment degrading the oxide layer.
    The dimensions of the first face of the first element may be greater than or equal to those of the first face of the second element.
    The method is applicable for example for the production of lithium solid battery batteries on thin or ultrafine glass substrates previously fixed on thick rigid substrates.
    According to an advantageous embodiment, the method may comprise the successive steps of: - preparing a first thick substrate (thickness greater than about 500 microns) traversed by holes opening on the two main surfaces of the first substrate; depositing one or more aluminum oxide layers on the first substrate so as to correctly and homogeneously cover at least one of the surfaces of the first substrate; - Postpone a second thin or ultrafine glass substrate on the first substrate by contacting a first face of the second substrate with one of the faces of the first substrate previously covered with aluminum oxide in order to bond between the two substrates; - manufacture several microelectronic devices on the second free face of the second substrate; exposing the assembly made to a humidity and temperature controlled environment in order to sinter the aluminum oxide layer (s) and to separate the second element from the first element. The adjustment of the parameters of the environment to which the assembly is exposed makes it possible to better manage the process of crumbling the layer (s) of aluminum oxide. In general, the oxide layers are used in microelectronic devices to fulfill several functionalities and particularly the encapsulation of air sensitive elements as in the case of lithium micro-batteries. However, the method described herein is based on the fact that exposure of these oxide layers to adequate thermal budgets (eg wet heat and / or laser irradiation) causes physical and / or chemical degradation of said layers. It is this property of unwanted degradation for conventional applications that is exploited in the dismantling of assemblies developed according to the method described here. One of the applications targeted by the present invention particularly relates to the production of lightweight and flexible microelectronic devices on a final substrate having a thickness of less than about 100 μm. To overcome the mechanical constraints related to the fragility of the final substrate, the flexible and fragile end substrates are transferred to rigid initial substrates compatible with microelectronic processes while easily disposing of fragile substrates supporting microelectronic devices.
    It is proposed a structure comprising two substrates and obtained by a reversible bonding process characterized by the realization of a removable bonding interface. The proposed process combines the advantages of direct bonding and intermediate bonding. The fixing of the fragile substrate on a rigid substrate is carried out without the use of an adhesive polymer. Thus, it is possible to obtain the assembly by contacting one of the surfaces of the fragile substrate with one of the two surfaces of the rigid support via the bonding interface. This contacting can for example be carried out by a standard rolling method.
    Advantageously and before proceeding with the bonding operations, the surfaces of the initial substrate can be completely covered with layers of aluminum oxide. On the other hand, the bonding energy of the assembly obtained can be easily increased by plasma pretreatment of the bonding surfaces or by a low temperature (for example less than about 400 ° C.) after-heat treatment for several hours. Similarly, it is possible to improve the bonding energy by applying an electrostatic discharge on one of the bonding surfaces or on one of the two outer faces of the assembly made.
    According to one of the possible options, the assembly obtained by bonding can potentially be used as a conveyor system in the manufacture of a multitude of microelectronic devices using complex processes. In particular, it is possible to use these assemblies despite technological steps based on large thermal budgets (a temperature greater than about 400 ° C applied for one or more hours) unlike the polymer-based bonding techniques described in the state of the prior art. This is particularly the case of electrochemical devices such as micro-lithium batteries whose electrode layers (more particularly cobalt oxide) sometimes require electrochemical activation annealing at a temperature of about 600 ° C. for at least two o'clock. This type of application assumes the use of substrate materials (fragile and rigid) with thermal expansion coefficients (CET) very close to prevent mechanical problems during the post-annealing process.
    Apart from the interest of the post anneals in the formation of the active layers of the devices manufactured, the assemblies obtained have a major advantage in improving the bonding energy thereby making the assembly comprising the fragile substrate and the substrate. rigid more robust to continue the other technological steps. In general, the oxide layer (s) may be deposited at a low temperature (for example less than about 400 ° C.) and with a very small thickness (total thickness less than or equal to about 100 nm) by means of deposit thin layers. Preferentially, the use of the Atomic Layer Deposition (ALD) technique which sequentially mixes an organometallic precursor, for example trimethylaluminum (TMA) when the oxide layer comprises alumina, with a precursor of water vapor (H2O) makes it possible to produce oxide films of very high purity and very thin.
    Alternatively, the oxide layer (s) can be obtained by a plasma assisted ALD method called PEALD (Plasma Enhanced Atomic Layer Deposition).
    The composition of the oxide obtained can be perfectly stoichiometric (Al 2 O 3 in the case of alumina) or stoichiometric (γγ in the case of alumina).
    Initially, that is to say before applying the heat treatment degrading the oxide layer, this or these oxide layers are characterized by a very low roughness, for example less than about 0.1 nm RMS (" Root Mean Square ") and a very hydrophilic surface. Advantageously, these characteristics ensure a high bonding energy between the two elements. Indeed, the hydrophilic nature of the oxide surfaces and the presence of the water molecules in the oxide film manufacturing process particularly advantage the attractive forces, especially the Van der Waals forces, between the two bonding surfaces of the two elements. This method of bonding is favored by the formation of hydrogen bonds between the two bonding surfaces thus ensuring a very high bonding energy.
    The material of the oxide layer, especially aluminum oxide, produced at low temperature (less than about 400 ° C.) may be an amorphous oxide with a relatively high hydrogen content. This hydrogen concentration can be adjusted according to the operating conditions of the layers, especially the deposition temperature. This phenomenon is more pronounced for the oxide layers produced at temperatures below about 150 ° C. (for example with a thickness of less than or equal to about 50 nm), the hydrogen content of which is very high compared with temperatures above about 150 ° C. Although the hydrogen bonds are of interest in reinforcing the bonding energy of the assemblies made, they are however at the origin of the destruction of the oxide layers. The atomic percentage of hydrogen in the material of the oxide layer may be greater than about 5%, and preferably between about 5% and 20%.
    In fact, the oxide layers exposed for a prolonged period (from a few minutes to a few hundred hours) to an aggressive environment, for example formed by a very high level of water vapor (between 90% and 100% of relative humidity) and a temperature of the order of 100 ° C, are characterized by a very high surface roughness (greater than about 10 nm RMS) with respect to the initial oxide layer (roughness less than about 0.1 nm) RMS). In addition, this modification of the surface condition is accompanied by a crumbling, or bursting, of the oxide layer causing a very strong degradation of said layer, leading to disassembly of the bonding interface. It is this characteristic of erosion of the oxide layers that can be exploited in the dissociation of the elements by chemical means implemented.
    The first element may be characterized by the presence of holes that opens onto the bonding interface and arranged within the first element so as to increase the total surface area to be covered by the oxide layers without disturbing the bonding properties. This architecture has the advantage of multiplying the channels of drainage and infiltration of water vapor during the dismantling of the bonding interface after exposure.
    Advantageously, the holes or drains passing through the first element may be of micrometric size and be spaced a hundred microns apart, thus constituting structures with drains characterized by structural ratios greater than or equal to 1. In general, the geometric characteristics of the drains formed in the first element can be adjusted in order to better regulate the rate of degradation of the oxide layer, and if necessary the dismounting of the bonding interface.
    Optionally, the method of separating the elements may be assisted by a mechanical action, such as the insertion of a blade or a corner at the bonding interface, to better understand the element that supports the microelectronic devices . According to another variant, the assistant action during the substrate separation process can be obtained by a pressurized jet of dry air, nitrogen, argon, helium or water.
    The basic principle of the separation of the second element vis-à-vis the first element may consist in chemically dismounting the bonding interface without degradation of the possible microelectronic devices arranged on the second element while preserving the integrity of the first element for a second element. possible reuse.
    In an advantageous embodiment, the exposure of the oxide layers present at the bonding interface to an environment that is aggressive in terms of humidity and temperature causes these layers to crumble so that the elements can be separated. The oxide used at the bonding interface may correspond to any oxide or combination of oxides characterized by a hydrogen content sufficient to effect bonding between the elements and the dismounting of the bonding interface by exposure to a bond. aggressive environment in humidity and temperature. This is for example the case of metal oxides, such as titanium oxide, zirconium oxide or zinc oxide, and dielectric oxides, such as semiconductor oxide, for example silicon oxide, or nitride oxide (for example a mixture of nitride and silica in the chemical form SiOxNyHz). These materials employed singly or in combination can be obtained by vacuum deposition methods such as ALD, PEALD or CVD.
    The oxide layer may be geometrically limited by the surface of the first element and / or the second element on which it is deposited.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIGS. 1 to 6 represent the steps of a reversible gluing process two elements between them, object of the present invention, according to a first embodiment; FIG. 7 represents an alternative embodiment of a first substrate reversibly bonded to a second substrate by the implementation of a reversible bonding method, object of the present invention, according to a second embodiment; - Figure 8 shows an assembly obtained during the implementation of a reversible bonding method, object of the present invention, according to a third embodiment.
    Identical, similar or equivalent parts of the different figures described below bear the same numerical references so as to facilitate the passage from one figure to another.
    The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable.
    The different possibilities (variants and embodiments) must be understood as not being exclusive of each other and can be combined with one another.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    A reversible bonding method between two elements according to a first embodiment is described below with reference to FIGS. 1 to 6.
    A first of the two elements intended to be bonded reversibly, or temporarily, to one another corresponds to a first substrate 102 as shown in FIG. 1. This first substrate 102 here comprises glass and its thickness (dimension parallel to the Z axis in Figure 1) is greater than or equal to about 500 μιτι. In the example of Figure 1, the first substrate 102 has a rectangular shape such that the two main faces (or faces of larger dimensions) 104,106 of the first substrate 102 each have dimensions equal to about 12 cm x 15 cm in the plane (X, Y). The first substrate 102 forms a rigid thick substrate for supporting the other member to be reversibly bonded thereto.
    The first substrate 102 comprises, for example, borosilicate glass without alkali or else boroaluminum-silicate-alkaline-earth glass derived from alkaline rare earths.
    Alternatively, the shape and / or material of the first substrate 102 may be different. For example, the first substrate 102 may comprise a semiconductor such as silicon, or a ceramic.
    A preparation of this first substrate 102 is first implemented. This preparation comprises the production of holes (or drains) 108 through the entire thickness of the first substrate 102. The holes 108 thus open on the main faces 104,106. In the exemplary embodiment shown in FIG. 1, the holes 108 here each have, in the main plane of the first substrate 102 (parallel to the (X, Y) plane), a disk-shaped section (each hole 108 thus having a cylindrical shape) of diameter equal to about 10 μιτι. The holes 108 are spaced from each other by a distance equal to about 500 μιτι. The ratio between the value of the distance separating two adjacent holes 108 and the size value of the section of one of the holes 108, called the structure ratio, here equal to about 50.
    In general, the holes 108 are preferably made with a structure ratio greater than 1.
    The holes 108 may be obtained either by the implementation of a chemical process for selectively etching the material of the first substrate 102, or by laser ablation.
    Preferably, the holes 108 are machined by any type of laser chosen as a function of the optical properties of the material of the first substrate 102. It may be for example a pulsed laser emitting in the ultraviolet (for example a laser to excimer, or YAG), or in the near infrared or far infrared. For example, in the case of a first substrate 102 comprising boroaluminosilicate glass without alkali and having a thickness equal to about 500 μιτι, a CO2 laser source having an emission wavelength equal to about 10, 64 μιτι and used at a power of about 20 Watts can be used to form the holes 108.
    Alternatively, the holes 108 may be made by the implementation of photo-litho-etching techniques. In this case, the first substrate 102 is first protected by a photoresist except at the areas corresponding to the locations of the holes 108, using dedicated masks. The etching of the holes 108 is then carried out in an aqueous solution, comprising, for example, sodium hydroxide (NaOH) or preferentially a solution based on hydrofluoric acid (HF).
    The completion of the holes 108 is followed by a chemical cleaning process of the first substrate 102 in order to eliminate the particulate etching residues as well as any potential organic contamination, and to confer an almost perfect flatness (roughness less than about 1 nm RMS) to the surface of the first substrate 102 intended to be secured to the second element, that is to say here the surface of the first main face 104. The cleaning method consists for example of first quenching the first substrate 102 in baths of detergents (soap) and ultrasound (two minutes), then to carry out several rinsing operations with DI water (de-ionized water) and to dry the surfaces of the first substrate 102 under air. Cleaning / rinsing / drying operations can be repeated several times until complete elimination of residues.
    The surface of the first substrate 102 intended to be secured to the second element is then prepared for bonding.
    In the first embodiment described here, this preparation here consists in covering the entire surface of the first substrate 102, that is to say the surface of the first main face 104 but also those of the second main face 106, the faces lateral surfaces of the first substrate 102 (those perpendicular to the main faces 104, 106) as well as the surfaces exposed in the holes 108, by one or more oxide layers 110 intended to form the bonding interface between the first substrate 102 and the second element (see Figure 2). In this first embodiment, a layer 110 of aluminum oxide, or alumina, is formed on the surface of the first substrate 102.
    The layer 110 is here deposited by ALD from an organometallic precursor, for example TMA, and a co-reactive precursor, for example deionized water or water vapor (H2O). The precursors are introduced sequentially into the deposition equipment used, starting preferentially with the organometallic precursor, and respecting a waiting time before the purge of the reaction residues. The waiting time represents the time of presence of the reaction species (organometallic precursors + co-reactive precursors) in the holes 108 of the first substrate 102. It is directly proportional to the value of the structure ratio characterizing the dimensions and the density with which holes 108 are made in the first substrate 102. By way of example, the waiting time can be up to about 100 seconds for holes 108 with a structure ratio of about 1500.
    Alternatively, the layer 110 may be deposited by PEALD.
    The composition of alumina layer 110 obtained by ALD at a low deposition temperature (below about 400 ° C.) can be perfectly stoichiometric (Al 2 O 3) or else stoichiometric (γγ).
    In the first embodiment described here, the two precursors (TMA and H2O) are first introduced one after the other with pulsations of a duration of about 50 ms. A waiting time of about 5 seconds is then respected. A purge operation lasting about 10 seconds is then performed. These operations are repeated several times as a function of the number of cycles of deposition desired, that is to say function of the desired thickness of the layer 110. Thus, it takes for example about 250 cycles as described above for depositing on the first substrate 102 a layer of alumina 110 with a thickness of about 50 nm. The total thickness of this layer 110 is for example between about 1 nm and 100 nm, this thickness being adjusted by the number of deposition cycles performed. The deposition temperatures are preferably between about 80 ° C and 400 ° C, and preferably below about 150 ° C. In this first embodiment, all the surfaces of the first substrate 102 are covered by the aluminum oxide layer 110 which has a thickness of about 50 nm obtained with the implementation of about 250 deposition cycles at a maximum of temperature equal to about 80 ° C.
    The layer 110 obtained is characterized by a presence of hydrogen of the order of 18% expressed as an atomic percentage, a density of the order of 2.65 g / cm 3 and a surface roughness of less than about 0.3 nm RMS. even less than about 0.1 nm RMS.
    Alternatively, only the surface of the first substrate 102 intended to be secured to the second element, that is to say the first main face 104 of the first substrate 102 in the example described here, can be covered with one or more layers of oxide for forming the bonding interface. The following step corresponds to the bonding of the first substrate 102 (covered with the layer 110) with the second element which is here a second substrate 112. In this first embodiment, the second substrate 112 corresponds to a rectangular substrate comprising glass boro-aluminosilicate without ultrafine alkali with a thickness of about 50 μm and a roughness of less than or equal to about 1 nm RMS.
    The second substrate 112 comprises, for example, borosilicate glass without alkali or else boroaluminum-silicate-alkaline-earth glass derived from alkaline rare earths.
    As for the first substrate 102, the shape and / or the material of the second substrate 112 may be different. One of the faces of the first substrate 102, here the first main face 104, covered by the layer 110 is brought into contact with a first main face 114 of the second substrate 112. The bonding interface between the two substrates 102, 112 is formed by the layer 110. The contacting of the two substrates 102, 112 can be carried out by a rolling process known as sheet-sheet (or "sheet to sheet" in English) thus allowing the air possibly trapped between the two substrates 102, 112 to be expelled. to prevent the formation of bubbles. The contacting of the two glass surfaces is here carried out by a suitable rolling method (for example with a pressure of between about 1 bar and 3 bars, and a speed of about 0.5 m / min), which allows the final obtaining an assembly characterized by a bonding energy greater than about 500 mJ.nr2 and for example of the order of 1 J.nr2.
    Beforehand, the second substrate 112 is cleaned as previously described for the first substrate 102. As a result, the bringing into contact of two identical surfaces in terms of flatness allows a bonding with a bonding energy.
    A clamping comprising the application of an electrostatic field to at least one of the two substrates 102, 112, before or after the contacting of the surfaces of the substrates, can be carried out to promote the reinforcement of the bonding of the second substrate 112 with respect to -vis the first substrate 102 through the presence of electrons at the insulating surfaces, and for obtaining a bonding energy of up to about 1 J.nr2. The bonding energy obtained can also be enhanced by implementing, prior to the bonding of the two substrates 102, 112, a plasma pretreatment of the surfaces to be bonded, thus achieving a surface activation increasing the surface energy by removal of contaminants on the surface or by reaction with these contaminants. For example, for a silicon oxide surface, an N2 plasma can be used. The bonding energy obtained can also be enhanced by the implementation of a thermal post-treatment, for example a controlled atmosphere annealing of Ü2 / N2 / Ar or under air, at low temperature (for example less than or equal to about 400 ° C) and for several hours (for example about 10 hours) on the assembly obtained. The assembly of the substrates 102 and 112 is facilitated when these substrates comprise the same material, for example glass, or more generally materials with very close or substantially equal CET (for example a difference between the values of the CET which is lower or equal to about 10%). In this case, the intrinsic thermal expansion of the second substrate 112 is substantially identical to that of the first substrate 102 during technological processes requiring exposure of these substrates at high temperatures. In the example described here, the thermal and mechanical characteristics of the first substrate 102 and the second substrate 112 are almost identical and given respectively by the values of the CTE (3.2 × 10 6 K -1) and the Young's modulus (74.8 kN / mm 2) of the glass of the first and second substrates 102, 112. The assembly obtained is shown in Figures 3 and 4. Figure 4 is a sectional view of the assembly obtained.
    According to the preferred configuration as represented in FIG. 3, the second substrate 112 comprises, in the main plane of the second substrate 112 (plane (X, Y) in FIG. 3) a section such that the projection of this section in the plane of the first main face 104 of the first substrate 102 is inscribed in the section of the first main face 104. In the example of Figure 3, the main faces 104,106 of the first substrate 102 each have, in the plane (X, Y) a rectangular shape of dimensions equal to about 12 cm × 15 cm, and the main faces 114,116 of the second substrate 112 each have, in the plane (X, Y), a rectangular shape of dimensions smaller than those of the main faces 104, 106 of the first substrate 102 and equal to about 11 cm x 14 cm. The second substrate 112 is substantially centered with respect to the first substrate 102.
    Clamping is here carried out after contacting the two substrates 102, 112. A high voltage 5kV positive polarity charge is applied to the surface of the first substrate 102 covered by the aluminum oxide layer 110 using an electrostatic high voltage charger. In parallel, an equivalent charge with inverse polarity is applied to the surface of the second substrate 112.
    After the securing of the second substrate 112 to the first substrate 102, microelectronic devices are then made on the second substrate 112. In the example shown in FIG. 5, the microelectronic devices produced correspond to electrochemical devices such as solid lithium micro-batteries. 118 made on the second main face 116 of the second substrate 112. In general, a lithium micro-battery is obtained by the implementation of deposits of thin layers of PVD or CVD type. A sectional view of one of the micro-batteries 118 made on the second substrate 112 is shown in FIG. 6. The micro-battery 118 comprises metal cathode 120 and anodic 122 metal collectors (comprising, for example, titanium gold, aluminum, platinum, tungsten, or any other suitable metal) disposed on the second glass substrate 112. The active layers of the micro-battery 118 form the two cathodes represented by the positive electrode 124 (cathode) and the negative electrode 126 (anode) electrically insulated from each other by an ionic electrolyte 128. The electrode positive electrode 124 has a thickness of between about 100 nm and 10 μιτι, and comprises a material having a good electronic and ionic conductivity (for example at least one of the following materials: TiOS, T1S2, LiTiOS, LÎTÎS2, UC0O2, V2O5, etc. .). The deposition of these materials is performed at temperatures that may exceed 400 ° C and sometimes requires annealing at a very high temperature (about 600 ° C or more) to activate all the electrochemical properties of these materials. This is the case of an electrode comprising UC0O2 deposited at a temperature of about 400 ° C and annealed at about 600 ° C for about 2 hours. Such thermal budgets are advantageous here because they make it possible to reinforce the bonding between the first and second substrates 102, 112, making it possible to reach bonding energies of approximately 4 J.nr.sub.2. The electrolyte 128 here has a thickness between about 500 nm and 5 pm and forms an electronic insulator with a high ionic conductivity. The electrolyte 128 comprises for example at least one of the following materials: LiPON, LiPONB, LiSiCON. The negative electrode 126 corresponds to a thin layer with a thickness of between a few nanometers and a few tens of microns, and may consist exclusively of lithium metal or a knowingly lithiated material.
    An encapsulation layer 130 is present on the active layers 124, 126 and 128 in particular because of the very high reactivity of lithium and lithiated layers vis-à-vis the atmosphere. The encapsulation layer 130 may be made monolithically or heterogeneously. By way of example, the encapsulation layer 130 represented in FIG. 6 corresponds to a barrier layer of thickness equal to approximately 25 μm reported by rolling or by sealing on all the micro-batteries 118 arranged on the second substrate. 112. The encapsulation layer 130 corresponds, for example, to laminated films of aluminum / PET (polyethylene terephthalate) / adhesive type.
    The method is completed by realizing the separation of the second substrate 112 from the first substrate 102 by degrading the layer 110.
    This separation is here obtained by crumbling of the aluminum oxide layer 110, this spalling being the consequence of an exposure of the layer 110, at the lateral faces of this layer 110 and of the parts of the layer 110 accessible from the holes 108, to a humidity and temperature controlled atmosphere that causes a very significant change in the surface roughness of the layer 110. Indeed, a prolonged exposure of the layer 110 to a moist heat environment causes a change in the properties physico-chemical properties of alumina accompanied by an increase in its surface roughness. For example, a layer of alumina 50 nm thick deposited by ALD at a temperature of 80 ° C. exposed for a few hours (for example about 5 hours) to a moist heat flux (100% relative humidity and 100% relative humidity). ° C) is enriched by hydroxyl OH pendant bonds and carbonate bonds (CO3). The roughness of the alumina which is initially less than about 0.3 nm RMS after deposition increases to reach values which exceed 100 nm RMS, thus causing a significant erosion of the alumina, allowing the detachment of the substrates 102,112. one of the other.
    When the assembly previously made is exposed in a humid environment as described above, the encapsulation layer 130 also provides protection devices 118 vis-à-vis this environment. Optionally, the separation of the substrates 102, 112 can be carried out under controlled pressure in dedicated hermetic chambers such as an autoclave.
    This separation can be assisted by a mechanical tool, such as a blade, making it possible to easily apprehend the second substrate 112 containing the devices 118.
    After this separation, the first substrate 102 remains intact and can be recycled for making other assemblies. One or both elements 102, 112 joined to one another according to the previously described method may not correspond to substrates. Thus, in the example shown in FIG. 7, the first element 102 does not correspond to a layer of material forming a first substrate as in the first embodiment previously described, but to four portions of material 202.1 - 202.4, comprising here of glass, and assembled to each other by forming a frame bonded to the layer 110 which is formed in advance on the first main face 114 of the second substrate 112. The portions 202.1 - 202.4 form a layer through which an opening 204 forming an access at layer 110.
    The separation of the two elements 102, 112 is carried out analogously to the first embodiment, with, however, easier access of the heat flow to the parts of the layer 110 forming the bonding interface whose surface is reduced compared to the first previously described embodiment. This may result in a shorter exposure of the various elements, including the devices 118, to the environment used to separate the two elements 202,112 and which can be aggressive and damage the devices 118.
    In addition, in the first embodiment previously described, the dimensions of the second substrate 112 and the positioning of the second substrate 112 relative to the first substrate 102 are such that, in the plane passing through the first main face 104 of the first substrate 102 to which the second substrate 112 is secured, a projection of the second substrate 112 in this plane is fully included in the section of this first main face 104 of the first substrate 102. Alternatively, this projection of the second substrate 112 in this plane may be only partially included in the section of the first main 104 of the first substrate 102. According to another variant, the dimensions of the main faces 114, 116 of the second substrate 112 may be substantially equal to those of the main faces 104, 106 of the first substrate 102.
    In the first embodiment previously described, the layer 110 serving to form the bonding interface between the first and second substrates 102, 112 is formed, prior to the joining of the two substrates 102, 112 to one another, on the surface of the first substrate 102. In general, the layer 110 serving to form the bonding interface between the first and second substrates 102, 112 can be made, prior to the joining of the two substrates 102, 112, on at least a portion of the surface of the first substrate 102 and / or on at least a portion of the surface of the second substrate 112, and this independently of the dimensions of the substrates 102, 112.
    In the first embodiment previously described, the holes 108 are made through the first substrate 102. Alternatively, it is possible to secure the substrates 102, 112 to one another by omitting to make these holes 108 through the first one. Substrate 102. In this case, the separation of the substrates 102, 112 is effected by infiltration of the flow of moist heat which occurs essentially at the side flanks of the assembly.
    In the first embodiment and the variants previously described, the bonding interface between the substrates 102, 110 is formed by the layer 110 comprising aluminum oxide. As a variant, this bonding interface may comprise one or more other oxides, for example deposited in thin layers, and may in particular correspond to a stack of layers.
    For example, the bonding interface may be formed by depositing on the first substrate 102 or the second substrate 112, a layer 110 of zirconium oxide with a thickness of, for example, approximately 10 nm per ALD from a combination sequential organometallic precursors such as tetrakis (dimethylamide) zirconium (TDMAZ) and water vapor (H2O). The deposition process is similar to that previously described for the aluminum oxide layer, the TMA organometallic precursor being replaced by TDMAZ and the zirconium oxide layer being obtained by carrying out about 100 deposition cycles. Under these conditions, the ZrC 2 layer obtained at a temperature of about 80 ° C. is amorphous with a density of the order of 5.9 g / cm 3, a surface roughness of less than about 0.5 nm RMS and a content of in hydrogen of the order of 10% (atomic percentage). In general, it is possible for the bonding interface to consist of an alternation of several oxides fulfilling the conditions necessary for bonding the elements 102, 112 and dismounting by exposure to a heat treatment capable of degrading these oxides. (eg due to a humid atmosphere).
    In addition, an alternative solution for degrading the oxide layer 110 and separating the substrate 102, 112 from each other, especially when one of these two substrates corresponds to a fragile glass substrate of lower thickness or equal to about 100 μιτι and that the other of the two substrates corresponds to a rigid glass substrate with a thickness greater than or equal to approximately 500 μm, consists in using a laser light source. In this case, the assembly of the two substrates 102, 112 is for example obtained by depositing on the first rigid substrate 102 a first metal layer 210, for example a platinum layer having a thickness of a few nanometers and intended to reflect the laser radiation. and a second layer 310 transparent to laser radiation intended to be used for separating the two substrates 102, 112, this second layer 310 comprising for example alumina Al2O3 and a thickness of a few nanometers. The assembly obtained according to this third embodiment is shown schematically in FIG. 8.
    In order to separate the substrates 102, 112 in the configuration as shown in FIG. 8, a direct laser irradiation of the assembly is carried out through the second substrate 112 which is transparent with respect to the laser radiation used, in order to 2. The laser used here emits in the ultraviolet and corresponds for example to an excimer laser emitting at a wavelength of 248 nm. Due to the different absorption properties between alumina and platinum with respect to the laser beam, the alumina layer can be dismounted mechanically. Indeed, platinum is absorbent vis-à-vis the laser beam used (absorption greater than about 65% at 248 nm) unlike alumina (absorption less than about 1% at 248 nm). Such a controlled laser projection leads to localized heating causing ablation of the alumina layer. The energy density of the laser used is controlled so as not to deteriorate the platinum metal layer and allow a total ablation of the transparent layer of alumina.
    Advantageously, the laser irradiation can be carried out through the first substrate 102. In this case, the layer 310 is disposed against the first substrate 102.
    When micro-batteries 118 are made on the second substrate 112, the stack of the active layers of the micro-batteries 118, in particular the metal layer forming the current collectors, can be used as a blocking and / or reflective surface of the laser beam. The laser irradiation is carried out in this case through the rear face of the first substrate 102, inducing ablation of the transparent alumina layer located under the active components 118.
    权利要求:
    Claims (14)
    [1" id="c-fr-0001]
    1. A reversible bonding method between a first element (102, 202.1 - 202.4) and a second element (112), comprising at least the implementation of the following steps: a) production of at least one oxide layer (110) , 310) on at least a first face (104) of the first member (102, 202.1 - 202.4) and / or on at least a first face (114) of the second member (112); b) securing the first face (104) of the first element (102, 202.1 - 202.4) with the first face (114) of the second element (112) such that the oxide layer (110, 310) forms a bonding interface between the first element (102, 202.1 - 202.4) and the second element (112); c) separating the second element (112) from the first element (102, 202.1-202.4) by applying a heat treatment physically and / or chemically degrading the oxide layer (110, 310).
    [2" id="c-fr-0002]
    The method of claim 1, wherein: - the first element (102) and / or the second element (112) corresponds to a substrate, and / or - the first element (102, 202.1 - 202.4) and / or the second element (112) comprises glass and / or a semiconductor and / or a ceramic, and / or - the first element (102, 202.1 - 202.4) has a thickness greater than or equal to approximately 500 μm, and / or - the second member (112) is less than about 500 μm thick.
    [3" id="c-fr-0003]
    3. Method according to one of the preceding claims, further comprising, before step a), the production of at least one opening (108) through the first element (102) and / or the second element (112). .
    [4" id="c-fr-0004]
    4. Method according to one of the preceding claims, further comprising, between steps b) and c), the implementation of a processing step of the first element (102, 202.1 - 202.2) and / or the second element (112).
    [5" id="c-fr-0005]
    The method according to claim 4, wherein: the processing step comprises producing at least a portion of at least one microelectronic device (118) on the second element (112) and / or on the first element (102), and / or - the treatment step is carried out at a temperature greater than or equal to about 400 ° C.
    [6" id="c-fr-0006]
    The method according to claim 5, wherein the microelectronic device (118) embodied corresponds to a power storage device and / or a power recovery device and / or a display device and / or a sensor and / or an actuator.
    [7" id="c-fr-0007]
    7. Method according to one of the preceding claims, wherein the oxide layer (110, 310): - comprises aluminum oxide and / or titanium oxide and / or oxide of zirconium and / or zinc oxide and / or silicon oxide, and / or - is deposited on all the surfaces of the first element (102, 202.1 - 202.4) and / or the second element (112), and / or - has a thickness less than or equal to about 100 nm, and / or - is deposited by depositing atomic layers from at least one organometallic precursor and a precursor comprising water molecules.
    [8" id="c-fr-0008]
    8. Method according to one of the preceding claims, wherein the heat treatment is carried out in a humid atmosphere and / or comprises heating by laser radiation of the oxide layer (110, 310).
    [9" id="c-fr-0009]
    The method of claim 8, wherein the heat treatment comprises heating by laser radiation the oxide layer (110, 310) through one of the first and second elements (102, 202.1 - 202.4, 112). one of the first and second elements (102, 202.1 - 202.4, 112) being transparent to laser radiation.
    [10" id="c-fr-0010]
    10. The method of claim 9, wherein the other of the first and second elements (102, 202.1 - 202.4, 112) comprises at least one layer (126, 210) capable of reflecting and / or absorbing the laser radiation.
    [11" id="c-fr-0011]
    11. Method according to one of the preceding claims, further comprising: - before step b), the implementation of a plasma treatment, and / or - between steps b) and c), the implementation a heat treatment reinforcing the bonding energy between the first element (102, 202.1 - 202.4) and the second element (112), and / or - before step c), the application of an electrostatic field on the first element (102, 202.1-202.4) and / or the second element (112).
    [12" id="c-fr-0012]
    12. The method of claim 11, wherein the heat treatment enhancing the bonding energy between the first element (102, 202.1 - 202.4) and the second element (112) is carried out at a temperature below about 400 ° C. .
    [13" id="c-fr-0013]
    13. Method according to one of the preceding claims, wherein the detachment of the second element (112) vis-à-vis the first element (102, 202.1 - 202.4) further comprises the application of a mechanical action and / or a pressurized gas jet between the first and second elements (102, 202.1 - 202.4, 112).
    [14" id="c-fr-0014]
    14. Method according to one of the preceding claims, wherein the dimensions of the first face (104) of the first member (102) are greater than or equal to those of the first face (114) of the second member (112).
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    FR2796491A1|1999-07-12|2001-01-19|Commissariat Energie Atomique|METHOD FOR TAKING OFF TWO ELEMENTS AND DEVICE FOR IMPLEMENTING SAME|
    FR2823599A1|2001-04-13|2002-10-18|Commissariat Energie Atomique|Preparation of substrate capable of being dismantled includes formation of interface between thin layer and substrate by molecular adhesion in controlled manner|
    WO2014037792A2|2012-09-07|2014-03-13|Soitec|Method for separating at least two substrates along a selected interface|
    FR2893750B1|2005-11-22|2008-03-14|Commissariat Energie Atomique|METHOD FOR MANUFACTURING SCREEN TYPE FLEXIBLE ELECTRONIC DEVICE COMPRISING A PLURALITY OF THIN FILM COMPONENTS|
    US9847243B2|2009-08-27|2017-12-19|Corning Incorporated|Debonding a glass substrate from carrier using ultrasonic wave|
    FR2983356B1|2011-11-24|2014-01-24|Commissariat Energie Atomique|METHOD FOR MANUFACTURING AN ALL-SOLID BATTERY|FR3065577B1|2017-04-25|2021-09-17|Commissariat Energie Atomique|SEALING CELL AND METHOD FOR ENCAPSULATING A MICROELECTRONIC COMPONENT WITH SUCH A SEALING CELL|
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    FR3078200B1|2018-02-16|2020-03-20|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PROCESS FOR MANUFACTURING A POSITIVE ELECTRODE FOR ANY SOLID LITHIUM MICROBATTERY|
    法律状态:
    2017-06-30| PLFP| Fee payment|Year of fee payment: 2 |
    2017-12-29| PLSC| Publication of the preliminary search report|Effective date: 20171229 |
    2018-06-27| PLFP| Fee payment|Year of fee payment: 3 |
    2020-06-30| PLFP| Fee payment|Year of fee payment: 5 |
    2021-06-30| PLFP| Fee payment|Year of fee payment: 6 |
    优先权:
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    FR1655914A|FR3053046B1|2016-06-24|2016-06-24|REVERSIBLE BONDING PROCESS BETWEEN TWO ELEMENTS|
    FR1655914|2016-06-24|FR1655914A| FR3053046B1|2016-06-24|2016-06-24|REVERSIBLE BONDING PROCESS BETWEEN TWO ELEMENTS|
    US15/629,444| US10305147B2|2016-06-24|2017-06-21|Method for reversible bonding between two elements|
    EP17177429.2A| EP3260511B1|2016-06-24|2017-06-22|Reversible bonding method between two elements|
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